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Datasheets found :: 16551Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version Romanian Version
Nr.Part NameDescriptionManufacturer
7701TC554001FTL-70524,288 WORDS x 8BIT STATIC RAMTOSHIBA
7702TC554001FTL-70L524,288 WORDS x 8BIT STATIC RAMTOSHIBA
7703TC554001FTL-70L524,288 WORDS x 8BIT STATIC RAMTOSHIBA
7704TC554001FTL-70V524, 288 words x 8 bit static RAM, access time 70nsTOSHIBA
7705TC554001FTL-85524,288 WORDS x 8BIT STATIC RAMTOSHIBA
7706TC554001FTL-85524,288 WORDS x 8BIT STATIC RAMTOSHIBA
7707TC554001FTL-85V524, 288 words x 8 bit static RAM, access time 85nsTOSHIBA
7708TC554161ASRAM - Low PowerTOSHIBA
7709TC554161A-VSRAM - Low PowerTOSHIBA
7710TC554161AFT-10262,144-WORD BY 16-BIT STATIC RAMTOSHIBA



7711TC554161AFT-10L262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7712TC554161AFT-10V262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7713TC554161AFT-70262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7714TC554161AFT-70L262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7715TC554161AFT-70V262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7716TC554161AFT-85262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7717TC554161AFT-85L262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7718TC554161AFT-85V262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7719TC554161AFTI-10262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7720TC554161AFTI-10L262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7721TC554161AFTI-70262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7722TC554161AFTI-70L262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7723TC554161AFTI-85262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7724TC554161AFTI-85L262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7725TC554161AISRAM - Low PowerTOSHIBA
7726TC554161FTI-10262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7727TC554161FTI-10262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7728TC554161FTI-10L262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7729TC554161FTI-10L262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7730TC554161FTI-85262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7731TC554161FTI-85262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7732TC554161FTI-85L262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7733TC554161FTI-85L262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7734TC554161FTL262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7735TC554161FTL262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7736TC554161FTL-10262, 144-word by 16 bit static RAM, access time 100nsTOSHIBA
7737TC554161FTL-10L262,144-WORD BY 16 BIT STATIC RAMTOSHIBA
7738TC554161FTL-10L262,144-WORD BY 16 BIT STATIC RAMTOSHIBA
7739TC554161FTL-10V262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7740TC554161FTL-10V262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7741TC554161FTL-70262, 144-word by 16 bit static RAM, access time 70nsTOSHIBA
7742TC554161FTL-70L262,144-WORD BY 16 BIT STATIC RAMTOSHIBA
7743TC554161FTL-70L262,144-WORD BY 16 BIT STATIC RAMTOSHIBA
7744TC554161FTL-70V262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7745TC554161FTL-70V262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7746TC554161FTL-85262, 144-word by 16 bit static RAM, access time 85nsTOSHIBA
7747TC554161FTL-85L262,144-WORD BY 16 BIT STATIC RAMTOSHIBA
7748TC554161FTL-85L262,144-WORD BY 16 BIT STATIC RAMTOSHIBA
7749TC554161FTL-85V262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7750TC554161FTL-85V262,144-WORD BY 16-BIT STATIC RAMTOSHIBA
7751TC55465AJ-1515ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAMTOSHIBA
7752TC55465AJ-2020ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAMTOSHIBA
7753TC55465AJ-2525ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAMTOSHIBA
7754TC55465AJ-3535ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAMTOSHIBA
7755TC55465AP-2020ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAMTOSHIBA
7756TC55465AP-2525ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAMTOSHIBA
7757TC55465AP-3535ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAMTOSHIBA
7758TC5564AFL-158,192 WORD X 8 BIT CMOS STATIC RAMTOSHIBA
7759TC5564AFL-158,192 WORD X 8 BIT CMOS STATIC RAMTOSHIBA
7760TC5564AFL-208,192 WORD X 8 BIT CMOS STATIC RAMTOSHIBA
7761TC5564AFL-208,192 WORD X 8 BIT CMOS STATIC RAMTOSHIBA
7762TC5564APL-15-0.3 to 7V; 1W; 150ns; 8.192 word x 8bit MOS static RAMTOSHIBA
7763TC5564APL-208,192 WORD X 8 BIT CMOS STATIC RAMTOSHIBA
7764TC5564APL-208,192 WORD X 8 BIT CMOS STATIC RAMTOSHIBA
7765TC5565AFL-1065,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7766TC5565AFL-1065,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7767TC5565AFL-1265,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7768TC5565AFL-1265,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7769TC5565AFL-1565,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7770TC5565AFL-1565,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7771TC5565APL65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7772TC5565APL65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7773TC5565APL-1065,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7774TC5565APL-1065,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7775TC5565APL-1265,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7776TC5565APL-1265,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7777TC5565APL-1565,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7778TC5565APL-1565,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technologyTOSHIBA
7779TC558128AJ131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7780TC558128AJ131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7781TC558128AJ-15131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7782TC558128AJ-15131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7783TC558128AJ-20131,072-word by 8 bit CMOS static RAM, access time 20nsTOSHIBA
7784TC558128BFT-12131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7785TC558128BFT-12131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7786TC558128BFT-15131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7787TC558128BFT-15131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7788TC558128BJ131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7789TC558128BJ131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7790TC558128BJ-12131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7791TC558128BJ-12131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7792TC558128BJ-15131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7793TC558128BJ-15131,072-WORD BY 8-BIT CMOS STATIC RAMTOSHIBA
7794TC55NEM208ASRAM - Low PowerTOSHIBA
7795TC55NEM208A-VSRAM - Low PowerTOSHIBA
7796TC55NEM208AFPNTENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOSTOSHIBA
7797TC55NEM208AFPNTENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOSTOSHIBA
7798TC55NEM208AFPN55524,288-WORD BY 8-BIT STATIC RAMTOSHIBA
7799TC55NEM208AFPN70524,288-WORD BY 8-BIT STATIC RAMTOSHIBA
7800TC55NEM208AFTNTENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOSTOSHIBA



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