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IRF820 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
Samsung ElectronicN-CHANNEL POWER MOSFETS

Others with the same file for datasheet:
IRF822, IRF821, IRF823,
Download IRF820 datasheet from
Samsung Electronic
pdf
327 kb
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. Download IRF820 datasheet from
General Electric Solid State
pdf
169 kb
SGS Thomson MicroelectronicsN - CHANNEL 500V - 2.5 W - 2.5 A - TO-220 PowerMESH MOSFET Download IRF820 datasheet from
SGS Thomson Microelectronics
pdf
97 kb
BayLinearPOWER MOSFET Download IRF820 datasheet from
BayLinear
pdf
40 kb
Intersil2.5A/ 500V/ 3.000 Ohm/ N-Channel Power MOSFET Download IRF820 datasheet from
Intersil
pdf
59 kb
International Rectifier500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Others with the same file for datasheet:
IRF820PBF,
Download IRF820 datasheet from
International Rectifier
pdf
175 kb
MotorolaN-CHANNEL Enhancement-Mode Silicon Gate TMOS Download IRF820 datasheet from
Motorola
pdf
146 kb
ST MicroelectronicsN-CHANNEL 500V - 2.5 OHM - 4A - TO-220 POWERMESH II MOSFET Download IRF820 datasheet from
ST Microelectronics
pdf
265 kb
Fairchild Semiconductor2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET Download IRF820 datasheet from
Fairchild Semiconductor
pdf
96 kb
IRF82View IRF820 to our catalogIRF820A




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