IRF6691TR1PBF datasheet
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IRF6691TR1PBF manufactured by:
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A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes. | 
Download IRF6691TR1PBF datasheet from International Rectifier |
pdf 812 kb |
| IRF6691TR1 | View IRF6691TR1PBF to our catalog | IRF6702M2D |