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IRF630 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
SGS Thomson MicroelectronicsN-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET

Others with the same file for datasheet:
IRF630FP,
Download IRF630 datasheet from
SGS Thomson Microelectronics
pdf
109 kb
Intersil9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs

Others with the same file for datasheet:
RF1S630SM,
Download IRF630 datasheet from
Intersil
pdf
67 kb
PhilipsN-channel TrenchMOS(tm) transistor Download IRF630 datasheet from
Philips
pdf
103 kb
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A.

Others with the same file for datasheet:
IRF631, IRF632, IRF633,
Download IRF630 datasheet from
General Electric Solid State
pdf
167 kb
SGS Thomson MicroelectronicsN - CHANNEL 200V - 0.35W - 9A - TO-220/FP MESH OVERLAY MOSFET Download IRF630 datasheet from
SGS Thomson Microelectronics
pdf
109 kb
Fairchild Semiconductor9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs Download IRF630 datasheet from
Fairchild Semiconductor
pdf
134 kb
International Rectifier200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Download IRF630 datasheet from
International Rectifier
pdf
182 kb
ST MicroelectronicsN-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET Download IRF630 datasheet from
ST Microelectronics
pdf
349 kb
IRF624STRRView IRF630 to our catalogIRF630A




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