IRF512 datasheet
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IRF512 manufactured by:
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N-Channel Power MOSFETs/ 5.5 A/ 60-100V Others with the same file for datasheet: IRF510-513 |
Download IRF512 datasheet from Fairchild Semiconductor |
pdf 156 kb |
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N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. Others with the same file for datasheet: IRF510 |
Download IRF512 datasheet from General Electric Solid State |
pdf 173 kb |
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N-channel power MOSFET, 100V, 4.9A | 
Download IRF512 datasheet from Harris Semiconductor |
pdf 74 kb |
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Trans MOSFET N-CH 100V 3.5A 3-Pin(3+Tab) TO-220 Others with the same file for datasheet: IRF510F, IRF510G |
Download IRF512 datasheet from New Jersey Semiconductor |
pdf 581 kb |
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N-Channel Power MOSFET | Download IRF512 datasheet from Samsung Electronic |
pdf 716 kb |
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MOSPOWER N-Channel Enhancement Mode Transistor 100V 3.5A | Download IRF512 datasheet from Siliconix |
pdf 735 kb |
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N-Channel Enhancement-Mode Vertical DMOS Power FETs | Download IRF512 datasheet from Supertex Inc |
pdf 77 kb |
| IRF511 | View IRF512 to our catalog | IRF513 |