IRF452 datasheet
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IRF452 manufactured by:
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N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. Others with the same file for datasheet: IRF450, IRF453 |
Download IRF452 datasheet from General Electric Solid State |
pdf 197 kb |
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11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs | 
Download IRF452 datasheet from Intersil |
pdf 62 kb |
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Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 Others with the same file for datasheet: IRF450R |
Download IRF452 datasheet from New Jersey Semiconductor |
pdf 134 kb |
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N-CHANNEL POWER MOSFETS | Download IRF452 datasheet from Samsung Electronic |
pdf 219 kb |
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MOSPOWER N-Channel Enhancement Mode Transistor 500V 12A | Download IRF452 datasheet from Siliconix |
pdf 773 kb |
| IRF451 | View IRF452 to our catalog | IRF452R |