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IRF452 datasheet

IRF452 manufactured by:
General Electric Solid State N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.

Others with the same file for datasheet:
IRF450, IRF453

IRF452 datasheet pdf General Electric Solid State
Download IRF452 datasheet from
General Electric Solid State
pdf
 197 kb 
Intersil 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs
IRF452 datasheet pdf Intersil
Download IRF452 datasheet from
Intersil
pdf
 62 kb 
New Jersey Semiconductor Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3

Others with the same file for datasheet:
IRF450R

IRF452 datasheet pdf New Jersey Semiconductor
Download IRF452 datasheet from
New Jersey Semiconductor
pdf
 134 kb 
Samsung Electronic N-CHANNEL POWER MOSFETS Download IRF452 datasheet from
Samsung Electronic
pdf
 219 kb 
IRF451 View IRF452 to our catalog IRF452R




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