IRF322 datasheet
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IRF322 manufactured by:
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N-Channel Power MOSFETs/ 3.0 A/ 350-400 V Others with the same file for datasheet: IRF320, IRF320-323, IRF721, IRF722, IRF723 |
Download IRF322 datasheet from Fairchild Semiconductor |
pdf 170 kb |
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N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. | 
Download IRF322 datasheet from General Electric Solid State |
pdf 167 kb |
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2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs | 
Download IRF322 datasheet from Intersil |
pdf 72 kb |
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Trans MOSFET N-CH 400V 2.8A 3-Pin(2+Tab) TO-3 | Download IRF322 datasheet from New Jersey Semiconductor |
pdf 136 kb |
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N-CHANNEL POWER MOSFETS | Download IRF322 datasheet from Samsung Electronic |
pdf 218 kb |
| IRF321 | View IRF322 to our catalog | IRF323 |