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IRF321 datasheet

IRF321 manufactured by:
Fairchild Semiconductor N-Channel Power MOSFETs/ 3.0 A/ 350-400 V

Others with the same file for datasheet:
IRF320, IRF320-323, IRF323, IRF721, IRF722

IRF321 datasheet pdf Fairchild Semiconductor
Download IRF321 datasheet from
Fairchild Semiconductor
pdf
 170 kb 
General Electric Solid State N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A.
IRF321 datasheet pdf General Electric Solid State
Download IRF321 datasheet from
General Electric Solid State
pdf
 167 kb 
Intersil 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs
IRF321 datasheet pdf Intersil
Download IRF321 datasheet from
Intersil
pdf
 72 kb 
New Jersey Semiconductor Trans MOSFET N-CH 350V 3.3A 3-Pin(2+Tab) TO-3 Download IRF321 datasheet from
New Jersey Semiconductor
pdf
 136 kb 
Samsung Electronic N-CHANNEL POWER MOSFETS Download IRF321 datasheet from
Samsung Electronic
pdf
 218 kb 
IRF3205ZSTRLPBF View IRF321 to our catalog IRF322




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