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IRF320 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
Fairchild SemiconductorN-Channel Power MOSFETs/ 3.0 A/ 350-400 V

Others with the same file for datasheet:
IRF320-323, IRF321, IRF322, IRF323, IRF721
Download IRF320 datasheet from
Fairchild Semiconductor
 170 kb 
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. Download IRF320 datasheet from
General Electric Solid State
 167 kb 
Intersil2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs Download IRF320 datasheet from
 72 kb 
New Jersey SemiconductorTrans MOSFET N-CH 400V 3.3A 3-Pin(2+Tab) TO-3E Download IRF320 datasheet from
New Jersey Semiconductor
 136 kb 
Samsung ElectronicN-CHANNEL POWER MOSFETS Download IRF320 datasheet from
Samsung Electronic
 218 kb 
IRF3007STRLPBFView IRF320 to our catalogIRF320-323

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