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IRF320 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A.

Others with the same file for datasheet:
IRF323, IRF322, IRF321,
Download IRF320 datasheet from
General Electric Solid State
167 kb
Intersil2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs Download IRF320 datasheet from
72 kb
Samsung ElectronicN-CHANNEL POWER MOSFETS Download IRF320 datasheet from
Samsung Electronic
218 kb
Fairchild SemiconductorN-Channel Power MOSFETs/ 3.0 A/ 350-400 V

Others with the same file for datasheet:
IRF320-323, IRF721, IRF723, IRF722,
Download IRF320 datasheet from
Fairchild Semiconductor
170 kb
IRF3007SView IRF320 to our catalogIRF320-323

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