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IRF250 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A.

Others with the same file for datasheet:
IRF251, IRF252, IRF253
Download IRF250 datasheet from
General Electric Solid State
 200 kb 
International Rectifier200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

Others with the same file for datasheet:
2N6766, JANTX2N6766, JANTXV2N6766
Download IRF250 datasheet from
International Rectifier
 151 kb 
Intersil30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET Download IRF250 datasheet from
 62 kb 

New Jersey SemiconductorTrans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3

Others with the same file for datasheet:
IRF250FI, IRF250R, IRF252R
Download IRF250 datasheet from
New Jersey Semiconductor
 135 kb 
Samsung ElectronicN-CHANNEL POWER MOSFETS Download IRF250 datasheet from
Samsung Electronic
 220 kb 
SemeLABN-CHANNEL POWER MOSFET Download IRF250 datasheet from
 27 kb 
IRF247View IRF250 to our catalogIRF250CF

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