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2N5551 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
PhilipsNPN high-voltage transistors

Others with the same file for datasheet:
2N5550,
Download 2N5551 datasheet from
Philips
pdf
53 kb
National SemiconductorNPN General Purpose Amplifier

Others with the same file for datasheet:
MMBT5551,
Download 2N5551 datasheet from
National Semiconductor
PDF
71 kb
Fairchild SemiconductorNPN General Purpose Amplifier Download 2N5551 datasheet from
Fairchild Semiconductor
pdf
472 kb
Boca Semiconductor CorporationNPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR Download 2N5551 datasheet from
Boca Semiconductor Corporation
pdf
61 kb
Continental Device India Limited 0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hF Download 2N5551 datasheet from
Continental Device India Limited
pdf
218 kb
SemtechNPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications

Others with the same file for datasheet:
HN5550, HN5551,
Download 2N5551 datasheet from
Semtech
pdf
134 kb
MotorolaAmplifier Transistors Download 2N5551 datasheet from
Motorola
pdf
194 kb
Honey TechnologyNPN Silicon Epitaxial Planar Transistor Download 2N5551 datasheet from
Honey Technology
pdf
135 kb
Micro ElectronicsSILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS

Others with the same file for datasheet:
2N5400, 2N5401,
Download 2N5551 datasheet from
Micro Electronics
pdf
171 kb
AUK CorpNPN Silicon Transistor (General purpose amplifier High voltage application) Download 2N5551 datasheet from
AUK Corp
pdf
203 kb
ON SemiconductorSmall Signal Amplifier NPN

Others with the same file for datasheet:
2N5551RL1, 2N5550RLRP, 2N5551ZL1, 2N5551RLRP, 2N5551RLRM,
Download 2N5551 datasheet from
ON Semiconductor
pdf
78 kb
Central SemiconductorLeaded Small Signal Transistor General Purpose Download 2N5551 datasheet from
Central Semiconductor
pdf
69 kb
USHA India LTDAmplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. Download 2N5551 datasheet from
USHA India LTD
pdf
80 kb
Korea Electronics (KEC)High Voltage Transistor Download 2N5551 datasheet from
Korea Electronics (KEC)
pdf
70 kb
2N5550_J24ZView 2N5551 to our catalog2N5551BU




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