| Nr. | Part Name | Description | Manufacturer by |
| 440841 | IRF150 | N-CHANNEL POWER MOSFET | SemeLAB |
| 440842 | IRF150 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | Fairchild Semiconductor |
| 440843 | IRF150 | 40A/ 100V/ 0.055 Ohm/ N-Channel Power MOSFET | Intersil |
| 440844 | IRF150 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 440845 | IRF150-153 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | Fairchild Semiconductor |
| 440846 | IRF1503 | 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 440847 | IRF1503L | 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
| 440848 | IRF1503S | 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 440849 | IRF150SMD | N-CHANNEL POWER MOSFET | SemeLAB |
| 440850 | IRF151 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | Fairchild Semiconductor |
| 440851 | IRF151 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 440852 | IRF152 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | Fairchild Semiconductor |
| 440853 | IRF152 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 440854 | IRF153 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | Fairchild Semiconductor |
| 440855 | IRF153 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 440856 | IRF1607 | 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 440857 | IRF1704 | Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A¨ì) | International Rectifier |
| 440858 | IRF1704 | Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A¨ì) | International Rectifier |
| 440859 | IRF1730G | Power MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A) | International Rectifier |
| 440860 | IRF1902 | 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
| 440861 | IRF1902TR | 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
| 440862 | IRF200 | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED | etc |
| 440863 | IRF200 | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED | etc |
| 440864 | IRF200S100RJ | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED | etc |
| 440865 | IRF200S100RJ | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED | etc |
| 440866 | IRF220 | N-Channel Power MOSFETs/ 7A/ 150-200V | Fairchild Semiconductor |
| 440867 | IRF220 | 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs | Intersil |
| 440868 | IRF220 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 440869 | IRF220-223 | N-Channel Power MOSFETs/ 7A/ 150-200V | Fairchild Semiconductor |
| 440870 | IRF2204 | 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 440871 | IRF2204L | 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
| 440872 | IRF2204S | 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 440873 | IRF221 | N-Channel Power MOSFETs/ 7A/ 150-200V | Fairchild Semiconductor |
| 440874 | IRF221 | 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs | Intersil |
| 440875 | IRF221 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 440876 | IRF222 | N-Channel Power MOSFETs/ 7A/ 150-200V | Fairchild Semiconductor |
| 440877 | IRF222 | 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs | Intersil |
| 440878 | IRF222 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 440879 | IRF223 | N-Channel Power MOSFETs/ 7A/ 150-200V | Fairchild Semiconductor |
| 440880 | IRF223 | 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs | Intersil |
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