335441 | BU407 | HIGH CURRENT NPN SILICON TRANSISTOR | SGS Thomson Microelectronics |
335442 | BU407 | High voltage transistor for switching applications | SGS-ATES |
335443 | BU407 | HIGH CURRENT NPN SILICON TRANSISTOR | ST Microelectronics |
335444 | BU407 | 330 V, 7 A, 60 W, NPN silicon power transistor | Texas Instruments |
335445 | BU407 | NPN, horizontal deflection transistor for horizontal deflection output stages of TV and SRT. Vceo = 150Vdc, Vcbo = 330Vdc, Vcev = 330Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. | USHA India LTD |
335446 | BU407 | SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION) | Wing Shing Computer Components |
335447 | BU4070B | Quad exclusive OR gate | ROHM |
335448 | BU4070B/BF | Standard Logic LSIs > CMOS logic BU4000B Series | ROHM |
335449 | BU4070BF | Quad exclusive OR gate | ROHM |
335450 | BU407D | NPN POWER TRANSISTOR | Boca Semiconductor Corporation |
335451 | BU407D | Leaded Power Transistor General Purpose | Central Semiconductor |
335452 | BU407D | POWER TRANSISTORS(7A,150-200V,60W) | MOSPEC Semiconductor |
335453 | BU407D | Silicon NPN Power Transistors TO-220C package | Savantic |
335454 | BU407D | High voltage transistor for switching applications | SGS-ATES |
335455 | BU407D | Silicon NPN triple diffused high voltage transistor | TOSHIBA |
335456 | BU407H | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
335457 | BU407H | POWER TRANSISTORS(7A,150-200V,60W) | MOSPEC Semiconductor |
335458 | BU407H | 330 V, 7 A, NPN epitaxial silicon transistor | Samsung Electronic |
335459 | BU407HTU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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335460 | BU407TU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
335461 | BU408 | Leaded Power Transistor General Purpose | Central Semiconductor |
335462 | BU408 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
335463 | BU408 | 400 V, 7 A, NPN epitaxial silicon transistor | Samsung Electronic |
335464 | BU408 | Silicon NPN Power Transistors TO-220C package | Savantic |
335465 | BU408 | High voltage transistor for switching applications | SGS-ATES |
335466 | BU408 | NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. | Wing Shing Computer Components |
335467 | BU4081B | Quad 2-input AND gate | ROHM |
335468 | BU4081B/BF/BFV | Standard Logic LSIs > CMOS logic BU4000B Series | ROHM |
335469 | BU4081BF | Quad 2-input AND gate | ROHM |
335470 | BU4081BFV | Quad 2-input AND gate | ROHM |
335471 | BU408D | NPN POWER TRANSISTOR | Boca Semiconductor Corporation |
335472 | BU408D | Leaded Power Transistor General Purpose | Central Semiconductor |
335473 | BU408D | POWER TRANSISTORS(7A,150-200V,60W) | MOSPEC Semiconductor |
335474 | BU408D | High voltage transistor for switching applications | SGS-ATES |
335475 | BU409 | NPN Transistor | SemeLAB |
335476 | BU409 | High voltage transistor for switching applications | SGS-ATES |
335477 | BU4093 | Quad 2-input NAND Schmitt trigger | ROHM |
335478 | BU4093B | Quad 2-input NAND Schmitt trigger | ROHM |
335479 | BU4093B/BF/BFV | Standard Logic LSIs > CMOS logic BU4000B Series | ROHM |
335480 | BU4093BF | Quad 2-input NAND Schmitt trigger | ROHM |