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Datasheets found :: 1351361Page: << | 6806 | 6807 | 6808 | 6809 | 6810 | 6811 | 6812 | 6813 | 6814 | 6815 | 6816 | >>
Nr.Part NameDescriptionManufacturer by
272401BU406-DNPN Power TransistorsON Semiconductor
272402BU4066BCQuad analog switchROHM
272403BU4066BC/BCF/BCFVStandard Logic LSIs > CMOS logic BU4000B SeriesROHM
272404BU4066BCFQuad analog switchROHM
272405BU4066BCFVQuad analog switchROHM
272406BU4069UBHex inverterROHM
272407BU4069UB/UBF/UBFVStandard Logic LSIs > CMOS logic BU4000B SeriesROHM
272408BU4069UBFHex inverterROHM
272409BU4069UBFVHex inverterROHM
272410BU406DPOWER TRANSISTORS(7A,150-200V,60W)MOSPEC Semiconductor
272411BU406DNPN POWER TRANSISTORBoca Semiconductor Corporation
272412BU406DNPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE)Wing Shing Computer Components
272413BU406DLeaded Power Transistor General PurposeCentral Semiconductor
272414BU406DNPN, horizontal deflection transistor. For horizontal deflection output stages of TV's and CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W.USHA India LTD
272415BU406HNPN Epitaxial Silicon TransistorFairchild Semiconductor
272416BU406H400 V, 7 A, NPN epitaxial silicon transistorSamsung Electronic
272417BU406HNPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.Wing Shing Computer Components
272418BU406TUNPN Epitaxial Silicon TransistorFairchild Semiconductor



272419BU407NPN Epitaxial Silicon TransistorFairchild Semiconductor
272420BU407HIGH CURRENT NPN SILICON TRANSISTORST Microelectronics
272421BU407NPN SILICON POWER TRANSISTORSPower Innovations
272422BU407POWER TRANSISTORS(7A,150-200V,60W)MOSPEC Semiconductor
272423BU407NPN POWER TRANSISTORBoca Semiconductor Corporation
272424BU407SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION)Wing Shing Computer Components
272425BU407Leaded Power Transistor General PurposeCentral Semiconductor
272426BU407Power 7A 150V DEF NPNON Semiconductor
272427BU407NPN EPITAXIAL SILICON TRANSISTORSamsung Electronic
272428BU407 60.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 7.000A Ic, hFE.Continental Device India Limited
272429BU407NPN power transistorMotorola
272430BU407HIGH CURRENT NPN SILICON TRANSISTORSGS Thomson Microelectronics
272431BU407330 V, 7 A, 60 W, NPN silicon power transistorTexas Instruments
272432BU407NPN, horizontal deflection transistor for horizontal deflection output stages of TV and SRT. Vceo = 150Vdc, Vcbo = 330Vdc, Vcev = 330Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W.USHA India LTD
272433BU4070BQuad exclusive OR gateROHM
272434BU4070B/BFStandard Logic LSIs > CMOS logic BU4000B SeriesROHM
272435BU4070BFQuad exclusive OR gateROHM
272436BU407DPOWER TRANSISTORS(7A,150-200V,60W)MOSPEC Semiconductor
272437BU407DNPN POWER TRANSISTORBoca Semiconductor Corporation
272438BU407DLeaded Power Transistor General PurposeCentral Semiconductor
272439BU407HNPN Epitaxial Silicon TransistorFairchild Semiconductor
272440BU407HPOWER TRANSISTORS(7A,150-200V,60W)MOSPEC Semiconductor



Datasheets found :: 1351361Page: << | 6806 | 6807 | 6808 | 6809 | 6810 | 6811 | 6812 | 6813 | 6814 | 6815 | 6816 | >>
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