272001 | AT-31625 | 4.8 V NPN Common Emitter Medium Power Output Transistor | Agilent (Hewlett-Packard) |
272002 | AT-31625-BLK | 4.8 V NPN Common Emitter Medium Power Output Transistor | Agilent (Hewlett-Packard) |
272003 | AT-31625-TR1 | 4.8 V NPN Common Emitter Medium Power Output Transistor | Agilent (Hewlett-Packard) |
272004 | AT-320 | Fixed Attenuators (SMA Type) | Hirose Electric |
272005 | AT-32011 | Low Current, High Performance NPN Silicon Bipolar Transistor | Agilent (Hewlett-Packard) |
272006 | AT-32011-BLK | Low Current, High Performance NPN Silicon Bipolar Transistor | Agilent (Hewlett-Packard) |
272007 | AT-32011-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor | Agilent (Hewlett-Packard) |
272008 | AT-320240Q1 | AT-320240Q1 320 X 240 DOTS 1/240 DUTY | Unknow |
272009 | AT-32032-BLK | AT32032 | Agilent (Hewlett-Packard) |
272010 | AT-32032-TR1 | AT32032 | Agilent (Hewlett-Packard) |
272011 | AT-32033 | Low Current, High Performance NPN Silicon Bipolar Transistor | Agilent (Hewlett-Packard) |
272012 | AT-32033-BLK | Low Current, High Performance NPN Silicon Bipolar Transistor | Agilent (Hewlett-Packard) |
272013 | AT-32033-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor | Agilent (Hewlett-Packard) |
272014 | AT-32063 | Low Current, High Performance NPN Silicon Bipolar Transistor | Agilent (Hewlett-Packard) |
272015 | AT-32063-BLK | Low Current, High Performance NPN Silicon Bipolar Transistor | Agilent (Hewlett-Packard) |
272016 | AT-32063-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor | Agilent (Hewlett-Packard) |
272017 | AT-332 | DC-2 GHz, voltage variable absorptive attenuator | MA-Com |
272018 | AT-332 | Voltage Variable Absorptive Attenuator DC - 2 GHz | Tyco Electronics |
272019 | AT-33225 | 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones | Agilent (Hewlett-Packard) |
|
272020 | AT-33225-BLK | 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones | Agilent (Hewlett-Packard) |
272021 | AT-33225-TR1 | 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones | Agilent (Hewlett-Packard) |
272022 | AT-337 | DC-2 GHz, voltage variable absorptive attenuator | MA-Com |
272023 | AT-354 | DC-2 GHz, voltage variable absorptive attenuator | MA-Com |
272024 | AT-354PIN | Voltage Variable Absorptive Attenuator DC - 2 GHz | Tyco Electronics |
272025 | AT-357 | GaAs Digital Attenuator, 31 dB, 5 Bit DC - 2 GHz | Tyco Electronics |
272026 | AT-357SMA | DC-2 GHz, 31 dB , 5-Bit GaAs digital attenuator | MA-Com |
272027 | AT-357SMA | GaAs Digital Attenuator, 31 dB, 5 Bit DC - 2 GHz | Tyco Electronics |
272028 | AT-358 | 0.02-2 GHz, 10 dB , 1-Bit GaAs digital attenuator | MA-Com |
272029 | AT-358 | 1 Bit, 10 dB, GaAs Digital Atten 0.02 - 2 GHz | Tyco Electronics |
272030 | AT-358PIN | 1 Bit, 10 dB, GaAs Digital Atten 0.02 - 2 GHz | Tyco Electronics |
272031 | AT-36408 | 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones | Agilent (Hewlett-Packard) |
272032 | AT-36408-BLK | 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones | Agilent (Hewlett-Packard) |
272033 | AT-36408-TR1 | 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones | Agilent (Hewlett-Packard) |
272034 | AT-38086 | 4.8 V NPN Silicon Bipolar Common Emitter Transistor | Agilent (Hewlett-Packard) |
272035 | AT-38086-BLK | 4.8 V NPN Silicon Bipolar Common Emitter Transistor | Agilent (Hewlett-Packard) |
272036 | AT-38086-TR1 | 4.8 V NPN Silicon Bipolar Common Emitter Transistor | Agilent (Hewlett-Packard) |
272037 | AT-400 | Fixed Attenuators (N,BNC,TNC) | Hirose Electric |
272038 | AT-401 | Fixed Attenuators (N,BNC,TNC) | Hirose Electric |
272039 | AT-402 | Fixed Attenuators (N,BNC,TNC) | Hirose Electric |
272040 | AT-403 | Fixed Attenuators (N,BNC,TNC) | Hirose Electric |