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Datasheets found :: 1351361Page: << | 6466 | 6467 | 6468 | 6469 | 6470 | 6471 | 6472 | 6473 | 6474 | 6475 | 6476 | >>
Nr.Part NameDescriptionManufacturer by
258801BF-U812RDSINGLE DIGIT LED DISPLAYSYellow Stone Corp
258802BF-U813RDSINGLE DIGIT LED DISPLAYSYellow Stone Corp
258803BF-U813RDSINGLE DIGIT LED DISPLAYSYellow Stone Corp
258804BF-U814RDSINGLE DIGIT LED DISPLAYSYellow Stone Corp
258805BF-U814RDSINGLE DIGIT LED DISPLAYSYellow Stone Corp
258806BF-U815RDSINGLE DIGIT LED DISPLAYSYellow Stone Corp
258807BF-U815RDSINGLE DIGIT LED DISPLAYSYellow Stone Corp
258808BF-U815RESINGLE DIGIT LED DISPLAYSYellow Stone Corp
258809BF-U815RESINGLE DIGIT LED DISPLAYSYellow Stone Corp
258810BF-U816RDSINGLE DIGIT LED DISPLAYSYellow Stone Corp
258811BF-U816RDSINGLE DIGIT LED DISPLAYSYellow Stone Corp
258812BF-U81DRDSINGLE DIGIT LED DISPLAYSYellow Stone Corp
258813BF-U81DRDSINGLE DIGIT LED DISPLAYSYellow Stone Corp
258814BF1005RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dBInfineon
258815BF1005Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)Siemens
258816BF1005RRF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dBInfineon
258817BF1005SRF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dBInfineon
258818BF1005SSilicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)Siemens
258819BF1005SRRF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dBInfineon



258820BF1005SWSilicon N-Channel MOSFET TetrodeInfineon
258821BF1005WSilicon N-Channel MOSFET TetrodeInfineon
258822BF1009Silicon N-Channel MOSFET Tetrode for ...Infineon
258823BF1009Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias networkSiemens
258824BF1009SRF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demandInfineon
258825BF1009SSilicon N-Channel MOSFET Tetrode for ...Infineon
258826BF1009SSilicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)Siemens
258827BF1009SRRF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demandInfineon
258828BF1012Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias networkSiemens
258829BF1012SSilicon N-Channel MOSFET TetrodeInfineon
258830BF1012SSilicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)Siemens
258831BF1012WSILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)Siemens
258832BF1100Dual-gate MOS-FETsPhilips
258833BF1100N-channel dual-gate MOSFETNXP Semiconductors
258834BF1100RDual-gate MOS-FETsPhilips
258835BF1100WRDual-gate MOS-FETPhilips
258836BF1100WRN-channel dual-gate MOSFETNXP Semiconductors
258837BF1101N-channel dual-gate MOS-FETsPhilips
258838BF1101RN-channel dual-gate MOS-FETsPhilips
258839BF1101WRN-channel dual-gate MOS-FETsPhilips
258840BF1101WRN-channel dual-gate MOSFETNXP Semiconductors



Datasheets found :: 1351361Page: << | 6466 | 6467 | 6468 | 6469 | 6470 | 6471 | 6472 | 6473 | 6474 | 6475 | 6476 | >>
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