| Nr. | Part Name | Description | Manufacturer by |
| 194961 | BF-U81DRD | SINGLE DIGIT LED DISPLAYS | Yellow Stone Corp |
| 194962 | BF1005 | RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB | Infineon |
| 194963 | BF1005 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens |
| 194964 | BF1005R | RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB | Infineon |
| 194965 | BF1005S | RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB | Infineon |
| 194966 | BF1005S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens |
| 194967 | BF1005SR | RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB | Infineon |
| 194968 | BF1005SW | Silicon N-Channel MOSFET Tetrode | Infineon |
| 194969 | BF1005W | Silicon N-Channel MOSFET Tetrode | Infineon |
| 194970 | BF1009 | Silicon N-Channel MOSFET Tetrode for ... | Infineon |
| 194971 | BF1009 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network | Siemens |
| 194972 | BF1009S | RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand | Infineon |
| 194973 | BF1009S | Silicon N-Channel MOSFET Tetrode for ... | Infineon |
| 194974 | BF1009S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) | Siemens |
| 194975 | BF1009SR | RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand | Infineon |
| 194976 | BF1012 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network | Siemens |
| 194977 | BF1012S | Silicon N-Channel MOSFET Tetrode | Infineon |
| 194978 | BF1012S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens |
| 194979 | BF1012W | SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) | Siemens |
| 194980 | BF1100 | Dual-gate MOS-FETs | Philips |
| 194981 | BF1100R | Dual-gate MOS-FETs | Philips |
| 194982 | BF1100WR | Dual-gate MOS-FET | Philips |
| 194983 | BF1101 | N-channel dual-gate MOS-FETs | Philips |
| 194984 | BF1101R | N-channel dual-gate MOS-FETs | Philips |
| 194985 | BF1101WR | N-channel dual-gate MOS-FETs | Philips |
| 194986 | BF1102 | Dual N-channel dual gate MOS-FETs | Philips |
| 194987 | BF1102R | Dual N-channel dual gate MOS-FETs | Philips |
| 194988 | BF1105 | N-channel dual-gate MOS-FETs | Philips |
| 194989 | BF1105R | N-channel dual-gate MOS-FETs | Philips |
| 194990 | BF1105WR | N-channel dual-gate MOS-FETs | Philips |
| 194991 | BF1107 | N-channel single gate MOS-FETs | Philips |
| 194992 | BF1107W | N-channel single gate MOS-FETs | Philips |
| 194993 | BF1108 | Silicon RF switches | Philips |
| 194994 | BF1108R | Silicon RF switches | Philips |
| 194995 | BF1109 | N-channel dual-gate MOS-FETs | Philips |
| 194996 | BF1109R | N-channel dual-gate MOS-FETs | Philips |
| 194997 | BF1109WR | N-channel dual-gate MOS-FETs | Philips |
| 194998 | BF115 | NPN SILICON PLANAR RF TRANSISTOR | Continental Device India Limited |
| 194999 | BF115 | NPN SILICON PLANAR RF TRANSISTOR | Continental Device India Limited |
| 195000 | BF1201 | N-channel dual-gate PoLo MOS-FETs | Philips |
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